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2N2920
Silicon NPN Transistor
Data Sheet
Description Semicoa Semiconductors offers: * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2920J) * JANTX level (2N2920JX) * JANTXV level (2N2920JV) * JANS level (2N2920JS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request
Applications
* General purpose * Matched Dual transistors * NPN silicon transistor
Features
* * * * Hermetically sealed TO-78 metal can Also available in chip configuration Chip geometry 0307 Reference document: MIL-PRF-19500/355
Benefits
Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25C Derate linearly above 25C Power Dissipation, TC = 25C Derate linearly above 25C Operating Junction Temperature Storage Temperature
Copyright 2002 Rev. H
* Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available
TC = 25C unless otherwise specified
Symbol VCEO VCBO VEBO IC PT
Rating 60 70 5 50 300 one section 600 both sections 1.71one section 3.43 both sections 750 one section 1.5 both sections 4.286 one section 7.14 both sections -65 to +200
Unit Volts Volts Volts mA mW mW/C MW W mW/C C
PT TJ TSTG Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N2920
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25C
Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE2-1/hFE2-2 |VBE1-VBE2|1 |VBE1-VBE2|2 |VBE1-VBE2|3 |VBE1-VBE2|1 |VBE1-VBE2|2 VBEsat1 VCEsat1 Test Conditions IC = 10 A, VCE = 5 Volts IC = 100 A, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 A, VCE = 5 Volts TA = -55C IC = 100 A, VCE = 5 Volts VCE = 5 Volts, IC = 10 A VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 1 mA VCE = 5 Volts, IC = 100 A TA = 25 C and -55C TA = 25 C and +125C IC = 1 mA, IB = 100 A IC = 1 mA, IB = 100 A Symbol V(BR)CEO ICBO1 ICBO2 ICBO3 ICEO IEBO1 IEBO2 Test Conditions IC = 10 mA VCB = 70 Volts VCB = 45 Volts VCB = 45 Volts, TA = 150C VCE = 5 Volts VEB = 6 Volts VEB = 5 Volts Min 60 10 2 2.5 2 10 2 Min 175 235 300 50 0.9 Typ Max 600 800 1,000 1.0 5 3 5 0.8 1 1.0 0.3 Typ Max Units Volts A nA A nA A nA Units
Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%
DC Current Gain
Base-Emitter Voltage differential Base-Emitter Voltage differential at temperature Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Dynamic Characteristics
mVolts
mVolts Volts Volts
0.5
Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance
Symbol |hFE1| hFE COBO
Noise Figure
Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit reverse Voltage Transfer Ratio
Copyright 2002 Rev. H
NF1 NF2 NF3 hie hoe hre
Test Conditions VCE = 5 Volts, IC = 500 A, f = 20 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCE = 5 Volts, IC = 10 A, Rg = 10 k f = 100 Hz f = 1 kHz f = 10 kHz VCB =5V, IC =1mA, f =1kHz VCB =5V, IC =1mA, f =1kHz VCB =5V, IC=100A, f=1kHz
Min 3 150
Typ
Max 20 600 5
Units
pF
3
5 3 3 30 60 1x10-3
dB
k mhos
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com

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